his Life


赵学军博士,49岁,于2019年4月21日在弗吉尼亚州阿灵顿的Capital Caring Halquist中心在家人和朋友的环绕中平静地去世。 1969年6月8日,他出生于中国河南省。1987年,他在武汉高考中以排名第二的成绩考入清华大学电子工程系,并于1992年获得学士学位。


他是施海雁深爱的丈夫;Christine 的慈父。他的妻子和女儿,父母, 和弟弟赵学民健在。


Dr. Xuejun Zhao, age 49, passed away peacefully at Capital Caring Halquist Center in Arlington, VA, on April 21, 2019, surrounded by family and friends. He was born to Chinese parents, Xingrong Zhao and Wenying Cao in Henan Province, China on June 8, 1969. In 1987, he ranked second in the college entrance exam in Wuhan and was admitted to Tsinghua University majoring in electronic engineering and earned his bachelor’s degree in 1992. 

He was married to Haiyan Shi on June 30, 1994 and their daughter, Christine Zhao was born on May 19, 2000. He received his M.S. and Ph.D. in electrical engineering from George Mason University in 2000. He worked as a senior engineer and later promoted to member of technical staff in AMD in San Jose, California during 2000-2005. From 2007 to 2011, he worked as a patent agent in Winston & Strawn, electronics engineer in Carnegie Institution of Washington and TMI-USA, and technical advisor in Greenblum & Bernstein. Since February 2011, he worked as a patent examiner at the United States Patent and Trade Office (USPTO) in the field of Electrical/Electronics/Computer Engineering. He was very active in the Chinese community of George Mason University and the USPTO and he received “President of the Year” award in 1998 for his outstanding service as president of the Chinese Student and Scholar Association in George Mason University. 

He is the deeply loved husband of Haiyan Shi; loving father of Christine Zhao. He is survived by his wife and daughter, his parents and his younger brother, Xuemin Zhao. 

Memorial Service to Celebrate the Life of Xuejun Zhao

Welcome and Opening Prayer

R. Joseph Tricquet Jr., Fairfax Baptist Church
Scripture Meditation
John 3:16
Celebration of the Life of Xuejun
Christine Zhao, daughter of Xuejun
Dimitris Ioannou, advisor of Xuejun in George Mason University
Idowu Osifade, friend and colleague of Xuejun
Nanlin Wang, friend and Tsinghua alumnus of Xuejun
Bin Cheng, friend and Tsinghua alumnus of Xuejun
Peter Wu, Principal of Hope Chinese School, Chantilly
Larry Lawrence Cherney, friend of Xuejun
Amazing Grace
Li Hui Zhang, Soloist and friend
Message of Comfort and Hope
Pastor Tricquet, Fairfax Baptist Church
Pastor Tricquet, Fairfax Baptist Church

​Memorial Contributions May Be Made To

1435 Mayflower Drive, McLean, VA 22101

A Poster distributed at the memorial service

PDF Attached

IEEE author profile at

Xuejun Zhao

Also published under: X. Zhao


Dept. of Electr. & Comput. Eng.
George Mason Univ.
Fairfax, VA, USA

Publication Topics

MOSFET, hot carriers, silicon-on-insulator, CMOS integrated circuits, interface states, semiconductor device measurement, SIMOX, buried layers, carrier lifetime, charge injection, electric current, electron traps, electron-hole recombination, electronic density of states, impact ionisation, inversion layers, semiconductor device models, semiconductor device reliability, semiconductor device testing, semiconductor diodes
Xuejun Zhao (S'98-M'01) received the B.S.E.E. degree from Tsinghua University, Beijing, China, in 1992, and the M.S.E.E. and Ph.D. degrees from the George Mason University (GMU), Fairfax, VA, in 1997 and 2000, respectively. From 1992 to 1994, he was with the National Key Laboratory of Microwave and Digital Communications, Tsinghua University, Beijing, where he designed high-speed communication circuits. In 1995, he joined the Department of Electrical and Computer Engineering, GMU, as a graduate student, where he conducted research on the analysis and characterization of SOI MOSFET's and their hot carrier reliability. In June 2000, he joined Advanced Micro Devices, Sunnyvale, CA, as a member of the Technology Development Group. His research interests continue to be on the performance and reliability of high-speed SOI MOSFET devices and circuits. (Based on document published on 7 August 2002).

A Patent in 2003

Method for determining the reliability of dielectric layers

Patent number: 7205165
Abstract: The present invention is generally directed to various methods for determining the reliability of dielectric layers. In one illustrative embodiment, the method comprises providing a device having a dielectric layer, applying a plurality of constant voltage pulses to the device and measuring a current through the dielectric layer after one or more of the constant voltage pulses has been applied.
Type: Grant
Filed: September 18, 2003
Date of Patent: April 17, 2007
Assignee: Advanced Micro Devices, Inc.
Inventors: Akram Ali Salman, Xuejun Zhao, Kurt O. Taylor, Stephen G. Beebe

An IEEE Publication in 2001

"Gated-diode" in SOI MOSFETs: a sensitive tool for characterizing the buried Si/SiO/sub 2/ interface

Xuejun ZhaoD.E. Ioannou

Dept. of Electr. & Comput. Eng., George Mason Univ., Fairfax, VA, USA


A "gated diode" technique is described for the measurement of the interface state density of the silicon film/buried oxide interface of SOI MOSFETs. This approach becomes possible by taking advantage of the front gate, which is biased to inversion (NMOSFET) or accumulation (BC-PMOSFET) during the measurement, while scanning the back interface through depletion. Using this technique the estimated value of the buried interface state density of typical low dose SIMOX MOSFETs was slightly over 10/sup 11//cm/sup 2/.